MEASUREMENTS OF MINORITY-CARRIER DIFFUSION LENGTH IN HETEROJUNCTION SOLAR CELLSTARRICONE L; GOMBIA E.1979; SOL. ENERGY MATER.; NLD; DA. 1979; VOL. 2; NO 1; PP. 45-52; BIBL. 11 REF.Article

ELECTRICAL AND PHOTOVOLTAIC PROPERTIES OF CD_1-XZN_XS/P-GAAS HETEROJUNCTIONSFRANZOSI P; GHEZZI C; GOMBIA E et al.1980; APPL. PHYS.; ISSN 0340-3793; DEU; DA. 1980; VOL. 21; NO 1; PP. 83-90; BIBL. 38 REF.Article

CRYSTAL DEFECTS IN CD_1-XZN_XS/GAAS HETEROSTRUCTURES PREPARED BY VAPOUR PHASE CHEMICAL TRANSPORTFRANZOSI P; GHEZZI C; GOMBIA E et al.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 51; NO 2; PP. 314-322; BIBL. 31 REF.Article

AC ADMITTANCE OF CDZNS/P-GAAS HETEROJUNCTIONSFRANZOSI P; GOMBIA E; GHEZZI C et al.1982; APPL. PHYS., A SOLIDS SURF.; ISSN 0721-7250; DEU; DA. 1982; VOL. 29; NO 4; PP. 225-231; BIBL. 17 REF.Article

EPITAXIAL GROWTH OF SINGLE CRYSTAL CD_1-X ZN_XS LAYERS ON (111) GAAS SUBSTRATES USING THE CLOSE-SPACED GEOMETRYFRANZOSI P; GHEZZI C; GOMBIA E et al.1978; J. CRYST. GROWTH; NLD; DA. 1978; VOL. 44; NO 3; PP. 306-314; BIBL. 22 REF.Article

TRANSPORT PROPERTIES OF SEMICONDUCTING ZNIN₂S₄.GOMBIA E; ROMEO N; SBERVEGLIERI G et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 34; NO 2; PP. 651-655; ABS. FR.; BIBL. 13 REF.Article

Thermal behaviour of deep levels at dislocations in n-type siliconCAVALCOLI, D; CAVALLINI, A; GOMBIA, E et al.Journal de physique. III (Print). 1997, Vol 7, Num 12, pp 2361-2366, issn 1155-4320Conference Paper

Use of spatially dependent electron capture to profile deep-level densities in Schottky barriersGOMBIA, E; GHEZZI, C; MOSCA, R et al.Journal of applied physics. 1985, Vol 58, Num 3, pp 1285-1291, issn 0021-8979Article

The CVD growth of CuAlTe₂ single crystalsGOMBIA, E; LECCABUE, F; PELOSI, C et al.Materials letters (General ed.). 1984, Vol 2, Num 5, pp 429-431, issn 0167-577XArticle

Effects of melt composition on deep electronic states and compensation ratios in n-type LEC gallium arsenideFORNARI, R; GOMBIA, E; MOSCA, R et al.Journal of electronic materials. 1989, Vol 18, Num 2, pp 151-155, issn 0361-5235, 5 p., IArticle

Energy levels associated with extended defects in plastically deformed n-type siliconCAVALCOLI, D; CAVALLINI, A; GOMBIA, E et al.Journal de physique. III (Print). 1997, Vol 7, Num 7, pp 1399-1409, issn 1155-4320Conference Paper

DX-center-related features by capacitance measurements in AlGaAsGHEZZI, C; GOMBIA, E; MOSCA, R et al.Journal of applied physics. 1991, Vol 70, Num 1, pp 215-220, issn 0021-8979, 6 p.Article

Hole diffusion length investigation by photon and electron excitation of GaAs Schottky barriersTARRICONE, L; FRIGERI, C; GOMBIA, E et al.Journal of applied physics. 1986, Vol 60, Num 5, pp 1745-1752, issn 0021-8979Article

Growth and characterization of sintered polycrystalline siliconGOMBIA, E; PANIZZIERI, R; SALVIATI, G et al.Journal of crystal growth. 1987, Vol 84, Num 4, pp 621-628, issn 0022-0248Article

The influence of the DX center on the capacitance of Schottky barriers in N-type AlGaAsGHEZZI, C; MOSCA, R; BOSACCHI, A et al.Applied surface science. 1991, Vol 50, Num 1-4, pp 400-404, issn 0169-4332, 5 p.Conference Paper

Evaluation of the diffusion length of minority carriers in bulk GaAsCASTALDINI, A; CAVALLINI, A; GOMBIA, E et al.Applied surface science. 1991, Vol 50, Num 1-4, pp 485-489, issn 0169-4332, 5 p.Conference Paper

Electrical characterization of self-assembled InAs/GaAs quantum dots by capacitance techniquesGOMBIA, E; MOSCA, R; FRIGERI, P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 393-397, issn 0921-5107Conference Paper

Electrical properties and thermal stability of MBE-grown Al/Al_xGa_1-xAs/Al_0.25Ga₀.₇₅As Schottky barriersBOSACCHI, A; FRANCHI, S; GOMBIA, E et al.Electronics Letters. 1994, Vol 30, Num 10, pp 820-822, issn 0013-5194Article

Preparation and characterization of semi-insulating undoped indium phosphideFORNARI, R; BRINCIOTTI, A; GOMBIA, E et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 95-100, issn 0921-5107Conference Paper

Unexpected current lowering by a low work-function metal contact: Mg/SI―GaAsDUBECKY, F; DUBECKY, M; HUBIK, P et al.Solid-state electronics. 2013, Vol 82, pp 72-76, issn 0038-1101, 5 p.Article

Evidence for non-equilibrium free electron density in AlGaAs at low temperaturesGHEZZI, C; MOSCA, R; BOSACCHI, A et al.Solid state communications. 1991, Vol 78, Num 2, pp 159-162, issn 0038-1098, 4 p.Article

Electrical properties of GaAs schottky diodes with embedded InAs self-assembled quantum dotsHASTAS, N. A; DIMITRIADIS, C. A; DOZSA, L et al.International conference on microelectronics. 2004, isbn 0-7803-8166-1, 2Vol, vol 1, 325-327Conference Paper

Experimental and numerical study of H⁺ irradiated p-i-n diodes for snubberless applicationsCOVA, P; MENOZZI, R; PORTESINE, M et al.Solid-state electronics. 2005, Vol 49, Num 2, pp 183-191, issn 0038-1101, 9 p.Article

Deep level transient spectroscopy investigation of GaAs grown by atomic layer molecular beam epitaxyBOSACCHI, A; GOMBIA, E; MADELLA, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 400-403, issn 0921-5107Conference Paper

Thermal stability of Al/AlGaAs and Al/GaAs/AlGaAs(MBE) Schottky barriersBOSACCHI, A; FRANCHI, S; GOMBIA, E et al.FRANCHI, S; Electronics Letters. 1993, Vol 29, Num 8, pp 651-653, issn 0013-5194Article